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Цена по запросу
IXFH30N50P, Power MOSFET, PolarFET, N Channel, 500 V, 30 A, 0.2 ohm, TO-247, Through Hole
Semiconductors - Discretes\FETs\Single MOSFETs
The IXFH30N50P is a 500V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™) and reduced RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
• Unclamped Inductive Switching (UIS) rated
• Low inductance offers easy to drive and protect
• Easy to mount
• Space-saving s
• High power density
| Channel Type | N Channel |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.2ohm |
| Drain Source Voltage Vds | 500V |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Power Dissipation | 460W |
| Rds(on) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| Вес, г | 6.23 |
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