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Цена по запросу
IXFH72N30X3, MOSFETs TO247 300V 72A N-CH X3CLASS
UnclassifiedHiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 30 |
| Fall Time | 11 ns |
| Forward Transconductance - Min | 36 S |
| Id - Continuous Drain Current | 72 A |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 390 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 82 nC |
| Rds On - Drain-Source Resistance | 19 mOhms |
| Rise Time | 25 ns |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 86 ns |
| Typical Turn-On Delay Time | 22 ns |
| Vds - Drain-Source Breakdown Voltage | 300 V |
| Vgs - Gate-Source Voltage | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Continuous Drain Current (Id) | 72A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 19mΩ@36A, 10V |
| Drain Source Voltage (Vdss) | 300V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@1.5mA |
| Input Capacitance (Ciss@Vds) | 5.4nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 390W |
| Total Gate Charge (Qg@Vgs) | 82nC@10V |
| Type | null |
| Вес, г | 6 |
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