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Цена по запросу
IXFK120N20P, MOSFETs 120 Amps 200V 0.022 Rds
UnclassifiedHiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 25 |
| Fall Time | 31 ns |
| Forward Transconductance - Min | 40 S |
| Id - Continuous Drain Current | 120 A |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package/Case | TO-264-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 714 W |
| Product Category | MOSFETs |
| Product Type | MOSFETs |
| Qg - Gate Charge | 152 nC |
| Rds On - Drain-Source Resistance | 22 mOhms |
| Rise Time | 35 ns |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | PolarHT HiPerFET Power MOSFET |
| Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Вес, г | 10 |
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