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IXFX64N50P, MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds
Unclassified Описание Транзистор: N-MOSFET, полевой, 500В, 64А, 830Вт, PLUS247™ Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 30 |
| Fall Time | 22 ns |
| Forward Transconductance - Min | 30 S |
| Id - Continuous Drain Current | 64 A |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | PLUS-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 830 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 150 nC |
| Rds On - Drain-Source Resistance | 85 mOhms |
| Rise Time | 25 ns |
| Series | IXFX64N50 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | HiPerFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET |
| Typical Turn-Off Delay Time | 85 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Вес, г | 6 |
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