Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
IXTP60N10T, Транзистор
Gen1 Trench Gate Power MOSFETs
IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
| Brand | IXYS |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 50 |
| Fall Time | 37 ns |
| Forward Transconductance - Min | 42 S |
| Id - Continuous Drain Current | 60 A |
| Manufacturer | IXYS |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 176 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 49 nC |
| Rds On - Drain-Source Resistance | 18 mOhms |
| Rise Time | 40 ns |
| Series | IXTP60N10 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | HiPerFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 43 ns |
| Typical Turn-On Delay Time | 27 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Вес, г | 2.8 |
Похожие товары
Цена по запросу
