Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт

Цена по запросу
MMBF4391LG
ЭлектроэлементTRANSISTOR, JFET, N, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:50mA; Zero Gate Voltage Drain Current Idss Max:150mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Max:14pF; Current Idss Max:150mA; Current Idss Min:50mA; Drain Source Voltage Vds:30V; No. of Pins:3Pins; On State Resistance Max:30ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:225mW; SMD Marking:6J; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Voltage Vgs Off Min:-4V; Zero Gate Voltage Drain Current Idss:50mA to 150mA
Channel Type | N |
Configuration | Single |
Drain-Gate Voltage (Max) | 30(V) |
Drain-Source Volt (Max) | 30(V) |
Gate-Source Voltage (Max) | 30(V) |
Mounting | Surface Mount |
Operating Temperature (Max) | 150C |
Operating Temperature (Min) | -55C |
Operating Temperature Classification | Military |
Package Type | SOT-23 |
Packaging | Tape and Reel |
Pin Count | 3 |
Rad Hardened | No |
Brand | ON Semiconductor |
Drain-Source Current At Vgs=0 | 50 mA to 150 mA |
Factory Pack Quantity | 3000 |
Manufacturer | ON Semiconductor |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Product Category | JFET |
Series | MMBF4391L |
Transistor Polarity | N-Channel |
Type | JFET |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Breakdown Voltage | 30 V |
Idss Drain-Source Cut-off Current | 50 to 150mA |
Maximum Drain Gate Voltage | 30V |
Maximum Drain Source Resistance | 30 Ω |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | +30 V |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Transistor Configuration | Single |
Width | 1.3mm |
Вид | JFET |
Тип | полевой |
Вес, г | 0.05 |