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Цена по запросу
MMBFJ111, JFETs N-Channel Switch
UnclassifiedA range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
| Brand | onsemi/Fairchild |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 5 mA |
| Factory Pack Quantity: Factory Pack Quantity | 3000 |
| Gate-Source Cutoff Voltage | -10 V |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Operating Temperature Range | -55 C to+150 C |
| Package / Case | SOT-23-3 |
| Part # Aliases | MMBFJ111_NL |
| Pd - Power Dissipation | 350 mW |
| Product Category | JFET |
| Product Type | JFETs |
| Rds On - Drain-Source Resistance | 30 Ohms |
| Series | MMBFJ111 |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Type | JFET |
| Vgs - Gate-Source Breakdown Voltage | -35 V |
| Brand | ON Semiconductor/Fairchild |
| Factory Pack Quantity | 3000 |
| Manufacturer | ON Semiconductor |
| Package / Case | SOT-23 |
| Packaging | Cut Tape |
| RoHS | Details |
| Unit Weight | 0.000282 oz |
| Channel Type | N |
| Drain Gate On-Capacitance | 28pF |
| Idss Drain-Source Cut-off Current | 20mA |
| Maximum Drain Gate Voltage | 35V |
| Maximum Drain Source Resistance | 30 Ω |
| Maximum Drain Source Voltage | 15 V |
| Maximum Gate Source Voltage | -35 V |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Source Gate On-Capacitance | 28pF |
| Transistor Configuration | Single |
| Width | 1.3mm |
| Case | SOT23 |
| Gate current | 50mA |
| Gate-source voltage | -35V |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 30Ω |
| Polarisation | unipolar |
| Power dissipation | 0.35W |
| Type of transistor | N-JFET |
| Вес, г | 0.018 |
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