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Цена по запросу
NDP6060L, MOSFETs N-Ch LL FET Enhancement Mode
Unclassified Описание Транзистор: N-MOSFET, полевой, 60В, 48А, 100Вт, TO220AB Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | onsemi/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 50 |
| Fall Time | 161 ns |
| Id - Continuous Drain Current | 48 A |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | NDP6060L_NL |
| Pd - Power Dissipation | 100 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 60 nC |
| Rds On - Drain-Source Resistance | 25 mOhms |
| Rise Time | 320 ns |
| Series | NDP6060L |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 49 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Вес, г | 2.913 |
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