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Цена по запросу
NDT3055L, MOSFETs SOT-223 N-CH LOGIC
Unclassified Описание Транзистор N-MOSFET, полевой, 60В, 4А, 3Вт, SOT223
| Brand | onsemi/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 4000 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 7 S |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | onsemi |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-4 |
| Part # Aliases | NDT3055L_NL |
| Pd - Power Dissipation | 3 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 20 nC |
| Rds On - Drain-Source Resistance | 70 mOhms |
| Rise Time | 7.5 ns |
| Series | NDT3055L |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 5 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Width | 3.56mm |
| Вес, г | 0.172 |
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