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Цена по запросу
NPT2021, GaN FETs DC-2.5GHz 45W Gain 16.5dB GaN HEMT
UnclassifiedNPTx Series GaN Wideband Transistors MACOM NPTx Series GaN Wideband Transistors are wideband transistors optimized for DC-2GHz operation. They support CW, pulsed, and linear operations with output power levels to 100W (50dBm) in an industry standard plastic package. They are ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
| Brand | MACOM |
| Configuration | Single |
| Factory Pack Quantity | 20 |
| Gain | 14.2 dB |
| Id - Continuous Drain Current | 14 mA |
| Manufacturer | MACOM |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | Screw Mount |
| Operating Frequency | 2.5 GHz |
| Operating Temperature Range | -40 C to+85 C |
| Output Power | 45 W |
| Package/Case | TO-272 |
| Packaging | Tray |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Rds On - Drain-Source Resistance | 340 mOhms |
| Subcategory | Transistors |
| Technology | GaN-on-Si |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 160 V |
| Vgs - Gate-Source Breakdown Voltage | 3 V |
| Vgs th - Gate-Source Threshold Voltage | -1.8 V |
| Вес, г | 2 |
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