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Цена по запросу
PMV213SN,215, MOSFETs PMV213SN/SOT23/TO-236AB
Unclassified Описание Транзистор: N-MOSFET, полевой, 100В, 1,9А, 2Вт, SOT23 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Base Product Number | PMV213 -> |
Current - Continuous Drain (Id) @ 25В°C | 1.9A (Tc) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation (Max) | 280mW (Tj) |
Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | TrenchMOSв„ў -> |
Supplier Device Package | TO-236AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Continuous Drain Current (Id) @ 25В°C | 1.9A |
Power Dissipation-Max (Ta=25В°C) | 280mW |
Rds On - Drain-Source Resistance | 250mО© @ 500mA,10V |
Transistor Polarity | N Channel |
Vds - Drain-Source Breakdown Voltage | 100V |
Vgs - Gate-Source Voltage | 4V @ 1mA |
кол-во в упаковке | 1 |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 1.9 A |
Maximum Drain Source Resistance | 250 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7 nC @ 10 V |
Width | 1.4mm |
Вес, г | 0.008 |