Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
QPD0005SR, GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor
UnclassifiedQPD0005 GaN RF Transistors Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.
| Brand | Qorvo |
| Factory Pack Quantity | 100 |
| Gain | 18.8 dB |
| Manufacturer | Qorvo |
| Maximum Drain Gate Voltage | 48 V |
| Maximum Operating Frequency | 5 GHz |
| Minimum Operating Frequency | 2.5 GHz |
| Moisture Sensitive | Yes |
| Output Power | 5 W |
| Packaging | Reel, Cut Tape |
| Part # Aliases | QPD0005 |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Vds - Drain-Source Breakdown Voltage | 48 V |
Похожие товары
Цена по запросу
