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Цена по запросу
QPD0007SR, GaN FETs 3.4-3.8GHz 15W 50V GaN Single Channel
UnclassifiedQPD0007 GaN RF Transistors Qorvo QPD0007 GaN RF Transistors are single-path discrete GaN on SiC high-electron-mobility transistors (HEMTs) in a DFN package. These Qorvo RF transistors are single-stage, unmatched transistors capable of delivering a P3dB output power of 20W at +48V operation. The QPD0007 transistors operate in the DC to 5GHz frequency range and offer 73% drain efficiency at 3.5GHz. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.
| Brand | Qorvo |
| Factory Pack Quantity | 100 |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 3.8 GHz |
| Minimum Operating Frequency | 3.4 GHz |
| Moisture Sensitive | Yes |
| Output Power | 15 W |
| Packaging | Reel, Cut Tape |
| Part # Aliases | QPD0007 |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
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