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Цена по запросу
QPD0020, GaN FETs DC-6 GHz, 3 W, 48V GaN RF Pwr Tr
UnclassifiedQPD0020 GaN RF Power Transistors Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.
| Brand | Qorvo |
| Development Kit | QPD0020EVB02 |
| Factory Pack Quantity | 100 |
| Gain | 16.7 dB |
| Manufacturer | Qorvo |
| Maximum Drain Gate Voltage | 48 V |
| Maximum Operating Frequency | 6 GHz |
| Minimum Operating Frequency | 0 Hz |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 34.7 W |
| Package / Case | QFN-20 |
| Packaging | Reel, Cut Tape |
| Part # Aliases | QPD0020SR |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 48 V |
| Вес, г | 2 |
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