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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
QPD1006, GaN FETs 450W 50V 1.2-1.4GHz GaN IMFET
UnclassifiedQPD1006 GaN RF IMFET Transistor Qorvo QPD1006 GaN RF Internally Matched FET (IMFET) Transistor is a 450W GaN SiC High Electron Mobility Transistor (HEMT). The QPD1006 transistor operates from 1.2GHz to 1.4GHz frequency range and a 50V supply rail. This device can support pulsed and Continuous Wave (CW) operations. The QPD1006 transistor is GaN IMFET fully matched to 50Ω in an industry standard air cavity package. This IMFET transistor is ideally suited for military and civilian radar.
| Application | Civilian and Military Radar |
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | QPD1006EVB3 |
| Factory Pack Quantity | 36 |
| Gain | 17.8 dB |
| Id - Continuous Drain Current | 14 A |
| Manufacturer | Qorvo |
| Maximum Drain Gate Voltage | 145 V |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Operating Frequency | 1.2 GHz to 1.4 GHz |
| Output Power | 450 W |
| Package / Case | NI-50CW |
| Pd - Power Dissipation | 445 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Вес, г | 1 |
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