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QPD1008L, GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
UnclassifiedQPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | QPD1008LPCB401 |
| Factory Pack Quantity | 25 |
| Gain | 17.5 dB |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | Screw Mount |
| Operating Frequency | 3.2 GHz |
| Operating Temperature Range | -40 C to+85 C |
| Output Power | 162 W |
| Package / Case | NI-360 |
| Packaging | Tray |
| Pd - Power Dissipation | 127 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Vgs th - Gate-Source Threshold Voltage | -2.8 V |
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