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QPD1009, GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
UnclassifiedQPD1009 & QPD1010 GaN RF Transistors Qorvo QPD1009 and QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and are constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization is potentially cost effective in terms of fewer amplifier line-ups and lower thermal management costs.
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | QPD1009-EVB1 |
| Factory Pack Quantity | 50 |
| Gain | 24 dB |
| Id - Continuous Drain Current | 700 mA |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Operating Frequency | 4 GHz |
| Operating Temperature Range | -40 C to+85 C |
| Output Power | 17 W |
| Package / Case | QFN-16 |
| Packaging | Tray |
| Pd - Power Dissipation | 17.5 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Vgs th - Gate-Source Threshold Voltage | -2.8 V |
| Вес, г | 6 |
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