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мелкий и крупный опт
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Цена по запросу
QPD1016, GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr
Unclassified
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | QPD1016EVB01 |
| Factory Pack Quantity | 25 |
| Gain | 23.9 dB |
| Id - Continuous Drain Current | 70 A |
| Manufacturer | Qorvo |
| Maximum Drain Gate Voltage | 55 V |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Operating Frequency | DC to 1.7 GHz |
| Output Power | 680 W |
| Package/Case | NI780-2 |
| Pd - Power Dissipation | 714 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 145 V |
| Vgs - Gate-Source Breakdown Voltage | -7 V to 1.5 V |
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