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QPD1022SR, GaN FETs DC-12GHz 10W 32V GaN
UnclassifiedTriQuint GaN Solutions TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components. Learn More
| Brand | Qorvo |
| Development Kit | QPD1022EVB01 |
| Factory Pack Quantity | 100 |
| Gain | 24 dB |
| Id - Continuous Drain Current | 610 mA |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 12 GHz |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Frequency | 0 Hz |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 10 W |
| Package/Case | QFN-16 |
| Part # Aliases | QPD1022 |
| Pd - Power Dissipation | 13.8 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Vgs - Gate-Source Breakdown Voltage | -2.8 V |
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