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Цена по запросу
QPD1025L, GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V
UnclassifiedQPD1025 & QPD1025L RF Input-Matched Transistors Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are discrete GaN on SiC High Electron Mobility Transistors (HEMT) that have an operating frequency range of 1.0GHz to 1.1GHz. The QPD1025 and QPD1025L transistors feature 22.5dB linear gain, 1800W output power, 65V operating voltage, and support both pulse and CW operations. Qorvo QPD1025 and QPD1025L RF Input-Matched Transistors are available in industry standard air cavity packages and are ideal for IFF transponders, avionics, and test instrumentation.
| Brand | Qorvo |
| Configuration | Dual Gate Dual Drain |
| Development Kit | QPD1025LEVB1 |
| Factory Pack Quantity | 18 |
| Gain | 22.9 dB |
| Id - Continuous Drain Current | 28 A |
| Manufacturer | Qorvo |
| Maximum Drain Gate Voltage | 225 V |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 1.5 kW |
| Package/Case | NI-1230-4 |
| Packaging | Tray |
| Pd - Power Dissipation | 758 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Type | HEMT |
| Вес, г | 40 |
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