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Цена по запросу
QPD1026L, GaN FETs 1500W, 65V,GaN pre-matched, 442(+/-5) MH
UnclassifiedQPD1026L GaN RF Input-Matched Transistor Qorvo QPD1026L GaN RF Input-Matched Transistor is a 1300W (P3dB) discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from 420MHz to 450MHz. The QPD1026L provides a linear gain of 25.9dB at 440MHz. Input prematch within the package results in easier external board matching, saving board space. The device supports both continuous wave and pulsed operations.
| Brand | Qorvo |
| Factory Pack Quantity | 18 |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 450 MHz |
| Minimum Operating Frequency | 420 MHz |
| Moisture Sensitive | Yes |
| Output Power | 1.5 kW |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Type | HEMT |
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