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QPD1028L, GaN FETs 750W, 65V, Pre-matched, 1.2-1.4GHz, Flan
UnclassifiedQPD1028 & QPD1028L 750W GaN on SiC Transistors Qorvo QPD1028 and QPD1028L 750W GaN on SiC Transistors are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.
| Brand | Qorvo |
| Factory Pack Quantity | 18 |
| Gain | 19.8 dB |
| Id - Continuous Drain Current | 19 A |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 750 W |
| Package/Case | NI-780 |
| Pd - Power Dissipation | 400 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN SiC |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 65 V |
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