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SPA06N80C3, Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
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SPA06N80C3, Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP

Semiconductors\Transistors\Unipolar transistors\N channel transistorsCoolMOS™ CE Power MOSFETs Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
Case PG-TO220-3-FP
Drain current 6A
Drain-source voltage 800V
Gate-source voltage ±20V
Kind of channel enhanced
Kind of package tube
Manufacturer INFINEON TECHNOLOGIES
Mounting THT
On-state resistance 0.9Ω
Polarisation unipolar
Power dissipation 39W
Technology CoolMOS™
Type of transistor N-MOSFET
Brand Infineon Technologies
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity 500
Fall Time 8 ns
Height 16.15 mm
Id - Continuous Drain Current 6 A
Length 10.65 mm
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style Through Hole
Number of Channels 1 Channel
Package / Case TO-220-3
Packaging Tube
Part # Aliases SP000216302 SPA06N80C3XK SPA06N80C3XKSA1
Pd - Power Dissipation 39 W
Product Category MOSFET
Rds On - Drain-Source Resistance 900 mOhms
Rise Time 15 ns
RoHS Details
Series CoolMOS C3
Tradename CoolMOS
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 65 ns
Typical Turn-On Delay Time 25 ns
Unit Weight 0.211644 oz
Vds - Drain-Source Breakdown Voltage 800 V
Vgs - Gate-Source Voltage 20 V
Width 4.85 mm
Factory Pack Quantity: Factory Pack Quantity 500
Manufacturer Infineon
Part # Aliases SP000216302 SPA6N8C3XK SPA06N80C3XKSA1
Product Type MOSFET
Qg - Gate Charge 41 nC
Rds On - Drain-Source Resistance 780 mOhms
Subcategory MOSFETs
Technology Si
Typical Turn-Off Delay Time 72 ns
Vgs - Gate-Source Voltage -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Вес, г 2.17

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