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Цена по запросу
SSM3K37MFV,L3F, Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.25 |
| Maximum Drain Source Resistance (mOhm) | 2200@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Small Signal |
| Supplier Package | VESM |
| Typical Input Capacitance @ Vds (pF) | 12@10V |
| Continuous Drain Current (Id) @ 25В°C | 250mA |
| Power Dissipation-Max (Ta=25В°C) | 150mW |
| Rds On - Drain-Source Resistance | 2.2О© @ 100mA,4.5V |
| Transistor Polarity | N Channel |
| Vds - Drain-Source Breakdown Voltage | 20V |
| Vgs - Gate-Source Voltage | 1V @ 1mA |
| Brand | Toshiba |
| Factory Pack Quantity: Factory Pack Quantity | 8000 |
| Id - Continuous Drain Current | 250 mA |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-723-3 |
| Pd - Power Dissipation | 150 mW |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Rds On - Drain-Source Resistance | 2.2 Ohms |
| Series | SSM3K36 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | U-MOSIII |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time | 18 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage | 350 mV |
| Maximum Continuous Drain Current | 250 mA |
| Maximum Drain Source Resistance | 5.6 Ω |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | ±10 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 mW |
| Minimum Gate Threshold Voltage | 0.35V |
| Mounting Type | Surface Mount |
| Package Type | SOT-723 |
| Transistor Configuration | Single |
| Width | 1.2mm |
| Current - Continuous Drain (Id) @ 25В°C | 250mA(Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 10V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | SOT-723 |
| Power Dissipation (Max) | 150mW(Ta) |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 100mA, 4.5V |
| Series | U-MOSIII |
| Supplier Device Package | VESM |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Вес, г | 0.008 |
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