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STD2LN60K3
Описание Транзистор: N-MOSFET, полевой, 600В, 1,26А, 45Вт, DPAK Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 2500 |
| Fall Time | 21 ns |
| Id - Continuous Drain Current | 2 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Pd - Power Dissipation | 45 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 12 nC |
| Rds On - Drain-Source Resistance | 4.5 Ohms |
| Rise Time | 8.5 ns |
| Series | STD2LN60K3 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | SuperMESH |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 23.5 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
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