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STP80NF06, MOSFET, Single - N-Channel, 60V, 80A, TO-220AB

Описание Транзистор: N-MOSFET, полевой, 60В, 80А, 300Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET

Категория	Транзистор
Тип	полевой
Вид	MOSFET
Configuration	Single
Continuous Drain Current (Id)	80 A
Drain-Source Voltage (Vds)	60 V
Fall Time	25 ns
Gate-Source Voltage	20 V
Mounting Type	Through Hole
ON Resistance (Rds(on))	6.5 mOhm
Operating Temperature Max.	175 °C
Operating Temperature Min.	-65 °C
Package Type	TO-220AB
Packaging	Tube
Pins	3
Power Dissipation (Pd)	300 W
Rise Time	85 ns
Transistor Polarity	N-Channel
Turn-OFF Delay Time	70 ns
Turn-ON Delay Time	25 ns
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	8 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	300 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-65 °C
Number of Elements per Chip	1
Pin Count	3
Priced to Clear	Yes
Series	STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	115 nC @ 10 V
Width	4.6mm
Вес, г	2.681