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STW28N65M2, Транзистор: N-MOSFET
Semiconductors\Transistors\Unipolar transistors\N channel transistors Описание Транзистор: N-MOSFET Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 600 |
| Fall Time | 8.8 ns |
| Id - Continuous Drain Current | 20 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 170 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 35 nC |
| Rds On - Drain-Source Resistance | 180 mOhms |
| Rise Time | 10 ns |
| Series | STW28N65M2 |
| Subcategory | MOSFETs |
| Technology | Si |
| Tradename | MDmesh |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time | 59 ns |
| Typical Turn-On Delay Time | 13.4 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Вес, г | 4.49 |
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