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Цена по запросу
T2G6000528-Q3, GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz
UnclassifiedT2G GaN HEMT Transistors Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5 |
| Factory Pack Quantity | 100 |
| Gain | 15 dB |
| Id - Continuous Drain Current | 650 mA |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 6 GHz |
| Minimum Operating Frequency | 0 Hz |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 10 W |
| Package/Case | NI-200 |
| Packaging | Tray |
| Part # Aliases | T2G6000528 1099997 |
| Pd - Power Dissipation | 12.5 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Вес, г | 8 |
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