Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
T2G6003028-FS, GaN FETs DC-6.0GHz 30 Watt 28V GaN Flangeless
UnclassifiedQPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
| Brand | Qorvo |
| Factory Pack Quantity | 50 |
| Manufacturer | Qorvo |
| Moisture Sensitive | Yes |
| Package/Case | NI-200 |
| Packaging | Tray |
| Part # Aliases | T2G6003028 1100021 |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN-on-SiC |
| Transistor Type | HEMT |
| Вес, г | 1 |
Похожие товары
Цена по запросу
