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Цена по запросу
TGF2023-2-10, GaN FETs DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
UnclassifiedTGF2023 GaN HEMT Transistors Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
| Brand | Qorvo |
| Factory Pack Quantity | 50 |
| Gain | 19 dB |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 14 GHz |
| Minimum Operating Frequency | 0 Hz |
| Output Power | 50 W |
| Package/Case | Die |
| Packaging | Gel Pack |
| Part # Aliases | TGF2023 1099951 |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Product | RF JFET Transistors |
| Subcategory | Transistors |
| Technology | GaN-on-SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | GaN HEMT |
| Type | GaN SiC HEMT |
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