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Цена по запросу
TGF2933, GaN FETs DC-25GHz 7Watt NF 1.3dB GaN
UnclassifiedQPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
| Application | Defense and Aerospace, Broadband Wireless |
| Brand | Qorvo |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 50 |
| Gain | 15 dB |
| Id - Continuous Drain Current | 80 mA |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| NF - Noise Figure | 1.3 dB |
| Operating Frequency | DC to 25 GHz |
| Output Power | 7.2 W |
| Package / Case | DIE |
| Packaging | Gel Pack |
| Part # Aliases | 1113799 |
| Pd - Power Dissipation | 8.9 W |
| Product Category | RF JFET Transistors |
| Product Type | RF JFET Transistors |
| Series | TGF2933 |
| Subcategory | Transistors |
| Technology | GaN-on-SiC |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
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