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Цена по запросу
TGF3015-SM, GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
UnclassifiedQPD GaN RF Transistors Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
| Brand | Qorvo |
| Configuration | Single |
| Development Kit | TGF3015-SM-EVB1 |
| Factory Pack Quantity | 100 |
| Gain | 17.1 dB |
| Id - Continuous Drain Current | 557 mA |
| Manufacturer | Qorvo |
| Maximum Operating Frequency | 3 GHz |
| Minimum Operating Frequency | 30 MHz |
| Moisture Sensitive | Yes |
| Mounting Style | SMD/SMT |
| Output Power | 11 W |
| Package/Case | QFN-EP-16 |
| Packaging | Tray |
| Part # Aliases | TGF3015 1120419 |
| Pd - Power Dissipation | 15.3 W |
| Product Category | GaN FETs |
| Product Type | GaN FETs |
| Subcategory | Transistors |
| Technology | GaN |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Vgs - Gate-Source Breakdown Voltage | -2.7 V |
| Вес, г | 1 |
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