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Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
UJ3N065080K3S, JFET N-Channel 650 V 32 A 190 W Through Hole TO-247-3
Discrete Semiconductor Products\TransistorsJFET 650V/80mOhm, SiC, N-ON JFET, G3, TO-247-3L, REDUCED Rth
| Breakdown Voltage | 650 V |
| Channel Type | N-Channel |
| Closing Resistance | 80 mOhm |
| Configuration | Single |
| Continuous Drain Current (Id) | 32 A |
| Drain-Source Voltage (Vds) | 650 V |
| Gate-Source Cutoff Voltage Max. (Vgs(off)) | 20 V |
| Mounting Type | Through Hole |
| Operating Temperature Max. | 175 °C |
| Operating Temperature Min. | -55 °C |
| Package Type | TO-247-3L |
| Packaging | Tube |
| Pins | 3 |
| Power Dissipation (Pd) | 190 W |
| Reflow Temperature Max. | 250 °C |
| Brand | Qorvo |
| Factory Pack Quantity | 600 |
| Id - Continuous Drain Current | 32 A |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package/Case | TO-247-3 |
| Pd - Power Dissipation | 190 W |
| Product Category | JFET |
| Product Type | JFETs |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Subcategory | Transistors |
| Technology | SiC |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
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