Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
UJ3N120065K3S, JFET N-Channel 1200 V 34 A 254 W Through Hole TO-247-3
Discrete Semiconductor Products\TransistorsUJ3N Normally-On JFET Transistors
UnitedSiC / Qorvo UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R DS(ON) ), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes, " giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.
| Brand | Qorvo/UnitedSiC |
| Configuration | Single |
| Drain-Source Current at Vgs=0 | 5 uA |
| Factory Pack Quantity: Factory Pack Quantity | 30 |
| Id - Continuous Drain Current | 34 A |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 254 W |
| Product Category | JFET |
| Product Type | JFETs |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Series | UJ3N |
| Subcategory | Transistors |
| Technology | SiC |
| Tradename | Sic JFET |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Vgs - Gate-Source Breakdown Voltage | -20 V to 3 V |
Похожие товары
Цена по запросу
