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Цена по запросу
UJ4C075060K4S, SiC MOSFETs 750V/60mO,SICFET, G4,TO247-4
UnclassifiedHigh-Performance SiC FETs
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
| Brand | Qorvo |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 30 |
| Id - Continuous Drain Current | 28 A |
| Manufacturer | Qorvo |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Pd - Power Dissipation | 155 W |
| Product Category | JFET |
| Product Type | JFETs |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 74 mOhms |
| Series | UJ4C |
| Subcategory | Transistors |
| Technology | SiC |
| Tradename | SiC FET |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 750 V |
| Вес, г | 6 |
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