Как мы работаем
По сертификату
"военный регистр"
"военный регистр"
Только с Юр. Лицами,
мелкий и крупный опт
мелкий и крупный опт
Цена по запросу
ZVN4310GTA, Транзистор N-MOSFET, полевой, 100В, 1,67А, 3Вт, SOT223
Описание Транзистор N-MOSFET, полевой, 100В, 1,67А, 3Вт, SOT223 Характеристики
Категория
Транзистор
Тип
полевой
Вид
MOSFET
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
| Continuous Drain Current (Id) | 1.67A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 540mΩ@10V, 3.3A |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@1mA |
| Input Capacitance (Ciss@Vds) | 350pF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 3W |
| Type | N Channel |
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity: Factory Pack Quantity | 1000 |
| Fall Time | 16 ns |
| Id - Continuous Drain Current | 1.67 A |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Pd - Power Dissipation | 3 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Rds On - Drain-Source Resistance | 750 mOhms |
| REACH - SVHC | Details |
| Rise Time | 25 ns |
| Series | ZVN4310 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Вес, г | 0.1 |
Похожие товары
Цена по запросу
